高信頼理工学研究センター

Advanced Materials Processing Research laboratory

遠藤 和弘 教授(研究所専任) 工学博士

研究業績(概要)

Nature、Adv. Mater. 、Crystal Growth & Design、Supercond. Sci. Technol.、Materialsなど、インパクトファクターIFの高い論文誌に筆頭論文を掲載。Mater. Res. Bull.などの論文誌のゲスト・エディター、基調・招待講演多数、米国・国内特許の取得、プレスリリースによる成果発信、多くの国際会議のオーガナイザーなど、研究の遂行に実績。

プラズマによるCFRPの直接接合については、2013年より科学技術振興機構のCOIプログラムの中で、新しい接合技術を発明したが、COIプログラムは、令和元年度の第2フェーズで終了、成果は、革新複合材料研究開発センターの主要な成果と位置付けられ、プレス発表を行った(日本経済新聞、日刊工業新聞など、8紙に掲載)。

研究業績(抜粋)

  1. K. Endo (1番目), 他4名, “High-quality Superconducting Thin Films of Bi2Sr2Ca2Cu3Ox Grown in situ by Metalorganic CVD”, Nature, 355, 327-328 (1992).
  2. 遠藤和弘,「MOCVD法-高性能Bi2Sr2Ca2Cu3Ox 超伝導薄膜を後熱処理なしで作製」 応用物理, 61(5), 514(1992)
  3. H. Yamasaki, K. Endo,他4名, Phys. Rev. Lett. 70, 3331(1993)
  4. K. Endo, “MOCVD Growth of High-Quality Bi-2223 Superconducting Films” Bismuth-Based High-temperature Superconductors”, ( eds. H. Maeda and K. Togano, Marcel Dekker), 524-544(1996)
  5. 遠藤和弘,「高温超電導体とエキゾチック超電導体」, 共立実験物理科学シリーズ3巻(共立出版),187-194 (1999).
  6. K. Endo (1番目), 他3名, “Growth of High-Quality Precipitate-Free Thin Films Suitable for Electronic Devices: A New Concept for Substrates”, Adv. Mater. 16, 1894-1897 (2004).
  7. K. Endo, P. Badica, “Growth of Stacked Heterostructures of SIS-type with S=YBCO or BSCCO and I=(Ba, Ca)CuO2 or (Sr, Ca)CuO2”, Supercond. Sci. Technol. 20, S430-S436, (2007).
  8. K. Endo, P. Badica, “(001) Bi2Sr2Ca2Cu3O10 Superconducting Thin Films on Substrates with Large Film-substrate Lattice Mismatch and Different Film-substrate Lattice Mismatch Anisotropy”, Crystal Growth & Design, 9(1), 391-394 ( 2009).
  9. K. Endo (1番目), 他3名, “Thin Films of the Insulating (001) CaCuO2 Infinite-Layer with Low Roughness and Highly Uniform Morphology”, Trans. Mater. Res. Soc. Jpn., 35[1], 151-153 (2010).
  10. K. Endo, “Advanced Growth Method of High-quality Oxide Films with Perovskite-related Structure for Future Electronics”, 18th Int. Conf. Composites/Nano-Engineering (ICCE-18), Oxide Nanocomposites & Heterostructures Symp., Alaska, US, 2010.7.9.(招待講演)
  11. K. Endo (1番目), 他5名, “Growth Control of High-Tc Superconducting Thin Films for Future Electronics”, Trans. Mater. Res. Soc. Jpn., 35[4], 993-996 (2010).
  12. K. Endo (1番目), 他6名, "Growth of Complex Epitaxial Multi-Component Oxide Thin Films and Heterostructures with Strong Anisotropy", Proc. Mater. Res. Soc., 1368: mrss11-1368-ww11-10 (2011).
  13. K. Endo, “Status in the Growth of Anisotropic Oxide Thin Films and Heterostructures for Future Electronics”, 19th Int. Conf. Composites/Nano-Engineering (ICCE-19), Oxide Nanocomposites & Heterostructures Symposium, Shanghai, China, 2011. 7. 25. (基調講演)
  14. P. Badica、K. Endo, 他2名 “Beautiful’ Unconventional Synthesis and Processing Technologies of Superconductors and Some Other Materials”, Sci. Technol. Adv. Mater., 12 , 013001, 1-13 (2011).
  15. K. Endo, 3名, “MOMBE Growth of YBa2Cu3O7 Thin Films with c-Axis, a-Axis and (103/110) Orientations on SrTiO3 Substrate”, IEEE Trans. Appl. Supercond. 21, 2771-2774 (2011).
  16. K. Endo, "Oxide Thin Films with Layered Structure Grown by MOCVD", IUMRS-Intl. Conf. Electron. Mater. (IUMRS-ICEM 2012), Yokohama, Japan, Sep. 23-28, 2012.(招待講演)
  17. K. Endo, "Growth of High Temperature Cuprate Superconductors Based Heterostructures", 20th Intl. Conf. Composites or Nano-Engineering (ICC-20), Beijing, China, July 22-28, 2012. (招待講演)
  18. K. Endo (1番目), 他4名, "Growth Control of High-Tc Superconducting Thin Films for Future Electronics", Trans. Mater. Res. Soc. Jpn., 20th Anniversary Special Issue, 85-88 (2012).
  19. K. Endo (1番目), 他4名, "Growth Aspect of Thin-Film Composite Heterostructures of Oxide Multicomponent Perovskites for Electronics", Jpn. J. Appl. Phys. 51, 11PG09-1-11PG09-6 (2012).
  20. K. Endo, "Orientation Control in Bi-2201 Films obtained by Spin-Coating", 21st Intl. Conf. Composites / Nano-Engineering (ICCE 2013), Tenerife, Spain, July 21-27, 2013(招待講演)
  21. K. Endo, "Growth of c-axis and non c-axis Oriented Bismuth-based Cuprate Thin Films by Spin Coating", 23rd Annual Meeting of MRS-Japan 2013, Yokohama, Japan, Dec. 9-11, 2013(招待講演)
  22. H. Yamasaki, K. Endo, "Nanostructural Defects for Effective Flux Pinning in High-quality Bi2Sr2CaCu2O8+x Epitaxial Thin Films with High Critical Current Density", Supercond. Sci. Technol., 27. 025014-025023 (2014).
  23. K. Endo (1番目), 他6名, "Growth of (001) or (115) Bi-2201 Thin Films by Spin Coating and MOCVD Targeting Future Electronics Applications", J. Phys.: Conf. Ser., 507, 012010 -012014 (2014).
  24. F. Iacopi, K. Endo, 他3名, “Power electronics with wide bandgap materials: Toward greener, more efficient technologies”, MRS Bulletin, 40, 390-396 (2015). (パワー半導体特集のゲストエディター)
  25. K. Endo (1番目), 他5名, “Characterization by X-ray Diffraction of Non-c-Axis Epitaxial Bi2Sr2CaCu2O8+x Thin Films”, IEEE Trans. On Appl. Supercond., 26 (3), 7500104 (2016).
  26. Y. Tateno, K. Endo, 他8名, “Growth of SrTiO3 Single Crystals with a Diameter of about 30 mm by the Verneuil Method”, Cryst. Growth & Des. 19, 604-612 (2019).
  27. K. Endo (1番目), 他2名, “Epitaxial Non c-axis Twin-free Bi2Sr2CaCu2O8+x Thin Films for Future THz Devices” Materials, 12 (7), 1124-1135 (2019).
  28. K. Komori, K. Endo, 他4名, “Preparation of a high-Tc Superconducting magnetic flux transformer with a 100mm bore coil and static magnetic field transfer at 77 K”, Jpn. J. Appl. Phys., 60, 073002 (2021).
 他、多数の論文、基調・招待講演

主な特許

  1. 米国 登録番号:7981840 (H23/07/19), 発明名称: Bi系酸化物超電導薄膜の作製法、発明者:遠藤和弘
  2. 国内 登録番号:第6638949号(R2/1/7), 発明名称: Bi系酸化物超伝導薄膜の製造方法とBi系酸化物超伝導薄膜構造体,特許権者; 金沢工業大学, 物質・材料研究機構、発明者: 遠藤和弘, 有沢俊一
  3. 国内 登録番号:6683993号 (R4/2/7), 発明名称: 接合物の製造方法, 特許権者: 遠藤和弘, 発明者:遠藤和弘
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