平成25年度の研究成果について

 当研究開発センターは、平成12年度の文部省(現文部科学省)の私立大学ハイテク・リサーチ・センター整備事業(研究期間5年)に選定され、金沢工業大学の附置研究所として設立されました。当センターは、エレクトロニクス分野のインテグレーション技術が生み出すデバイスシステムの研究開発を目的として、昭和59年に開設した電子デバイスシステム研究所を母体として、開設以来15年の間に最重点研究領域として成長した光電相互変換デバイスシステム開発に集中・特化し、組織の再編と施設の強化を図り革新的に発展させたものであります。専用研究棟(40号館)を金沢工業大学野々市キャンパス内に新築し、既設設備の移設や新規設備の搬入を終え、平成13年3月から[酸化物半導体の価電子制御と高導電率化およびデバイスへの応用]及び[次世代電子ディスプレイシステムの開発]2つの研究プロジェクトが本格的に活動を開始しました。平成16年3月に両プロジェクトの成果を報告書としてまとめて報告し終了しました。引き続き、平成17年度の私立大学学術研究高度化促進事業(研究期間3年)に選定され、「環境調和型光電相互変換デバイス技術の確立とその応用」並びに「環境調和型電子ディスプレイシステムの開発」の2つのプロジェクトを実施し、平成20年3月に両プロジェクトの成果を報告書としてまとめて報告し終了しました。また,平成23年度の「私立大学戦略的研究基盤形成支援事業」に選定され,設立された電気・光・エネルギー応用研究センターに所属して光・電子デバイス・システムの開発研究を実施しています。 本報告をご覧くださる諸賢のご忠告やご助言をお願いする次第であります。今後とも皆様方のご理解とご支援を心からお願い申し上げます。  終わりにあたり、本センターの研究に対し、種々のご支援・ご協力を頂いた関係機関、並びに委託研究や奨学寄付金を提供して頂いた多くの民間企業各社に対し、深く感謝申し上げます。

平成26年6月

所長 南 内嗣



南・宮田研究室 (Minami and Miyata Laboratories)

We are extensively investigating new n- and p-type oxide semiconductors for optoelectronic devices, new oxide phosphors for emissive displays, new optoelectronic devices and new display systems. A new research project was started in May 2007: Development of indium substitute materials for a transparent conducting electrode. This research was financially supported in part by the Rare Metal Substitute Materials Development Project initiated by the Ministry of Economy, Trade and Industry of Japan and transferred to the New Energy Development Organization from April 2008; the research project was completed successfully in March 2009. A new research project was started in August 2010: Development of low cost and high quality transparent conducting oxide (TCO) films by sputtering deposition. The research was financially supported in part by the New Energy and Industrial Technology Development Organization (NEDO), Japan, via the Photovoltaic Power Generation Technology Research Association (PVTEC), Japan; the research project was finished successfully in March 2013.

[1] Preparation and device application of intelligent oxide thin films.

Highly conductive and transparent thin films have many applications such as transparent electrodes for optoelectronic devices and transparent heat mirrors for solar energy utilization. Although indium tin oxide (ITO) films are in practical use, ITO is a relatively expensive material because indium is in rather limited supply. We have proposed use of new transparent conducting oxide (TCO) materials, consisting of ZnO and multicomponent oxide. Especially, the following subjects are in progress:
1) Development of new TCO materials and its deposition techniques.
2) Development of new p-type oxide semiconductors and its deposition technique.
3) Development of optoelectronic devices using new oxide semiconductors.
4) Development of sensor and MEMS using new oxide semiconductors.

[2] Preparation and device application of phosphors.

We have proposed new thick-ceramic-insulating-layer-type thin-film electroluminescent (EL) devices. In addition to the thin-film EL devices, we have proposed the use of oxide phosphors for EL emitting layer.
Recently, we have developed a new type of multicolor emissive TFEL devices using oxide phosphors, such as transition metal- or rear earth-activated Zn2SiO4, ZnGa2O4, CaGa2O4, Ga2O3, CaO, GeO2, Zn2SiO4-ZnGa2O4, Zn2SiO4-Zn2GeO4 and CaO-Ga2O3 as an emitting layer. The following subjects are in progress:
1) Development of new oxide phosphor materials and its deposition techniques.
2) Development of new thick-ceramic-insulating-layer-type TFEL devices.
3) Developments of TFEL display using new thick-ceramic-insulating-layer-type TFE devices.

坂本研究室 (Sakamoto Laboratory)

[1] Three-dimensional Display Using Light Emitting Diode
The purpose of this research is to develop a system to make display with a three-dimensional image which was overflowed in the sensation of reality. We arranged Light Emitting Diode (LED) three-dimensionally for this purpose.
Our goal is to make a big screen and then attempt to reduce the cost.

[2] Three-dimensional Display Using Multiple Layer Picture Screens
At present, a three-dimensional image is able to display on real space by a multiple layer pictures type. However, the conventional methods were difficult to display the color images. Our works are advancing the development and research of the three-dimensional color image display systems, in the multiple layer pictures type.

[3] The Driving Circuits of LED-light
With the developments of luminous efficiency of LED, popularization of LED lamps is to be expected. Therefore, as well as luminous efficiency, increasing efficiency of lighting circuit is important from the point of view of consideration the efficiency of an entire of the lighting system. In response to this requirement, the following studies are being conducted.
1) Development of the new rush current suppressor which uses a solid state relay
2) Development of the high efficiency lighting circuit of LED lamp.


山口研究室 (Yamaguchi Laboratory)

Optical Properties of III-nitride materials and devices are investigated both experimentally and theoretically. The following two topics are intensively being studied at present.

[1]Optical Gain Characteristics of InGaN Green-Emitting Laser Diodes
We theoretically predicted in 2006 that the utilization of semipolar GaN substrates is beneficial to realize high-performance and low-cost green laser diodes. Now, we are performing more realistic calculation of optical gain characteristics to design the device structure in detail. In addition, experimental studies have just been launched to measure the anisotropic optical gain characteristics of semipolar-oriented InGaN quantum wells.

[2] Optical Characterization of GaN Substrates for High-Efficient White LEDs
High quality GaN substrates with low defect density and small residual strain are required for high-efficient white LEDs. We are measuring time-resolved photoluminescence spectra to elucidate defect density and to investigate carrier dynamics. 2D-strain mapping measurements by low-temperature micro-reflectance are also being carried out to understand the strain relaxation mechanism and to reduce the residual strain in the substrates.


深田研究室 (Fukada Laboratory)

[1] Development of thin film phosphor materials
Our objective is the development of thin film phosphors with high efficiency and chemical stability for inorganic thin-film electroluminescence devices and white light-emitting diodes. Various phosphor thin films are prepared by a sol-gel dip coating followed by post annealing at a high temperature. In addition, we will conduct studies on inorganic-organic hybrid phosphors and luminescent devices utilizing these phosphors.

[2] First-principles molecular-dynamics calculations
The first-principles molecular-dynamics simulation is an effective method of explaining and predicting various properties of semiconductors and metals though electron-state calculations based on quantum dynamics. Aiming at the improvement of the experimental conditions in the preparation of inorganic or organic semiconductors and/or the development of new optoelectronic devices, we will conduct exploring and predicting physical phenomena on the atomic and electronic levels.


発表論文

    1. T. Minami, Y. Nishi, T. Miyata:“Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells” , Thin Solid Films, Vol. 549, pp. 65-69 (2013)
    2. T. Minami, Y. Nishi,  T. Miyata : “High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3 Thin Film as N-Type Layer”, Applied Physics Express, Vol.6, pp. 044101-1-044101-4 (2013)
    3. J. Nomoto, Y. Nishi, T. Miyata, T. Minami : “Influence of the kind and content of doped impurities on impurity-doped ZnO transparent electrode applications in thin-film solar cells” , Thin Solid Films, Vol. 534, pp. 426-431 (2013) 
    4. 佐藤 翔,新元 渉,坂本 康正,田村 陽一,福田 一郎:“定電流電源型パワーLEDランプ用点灯回路” 照明学会誌 第97巻,第5号,pp.278−281,(2013)
    5. C. Sasaoka, F. Miyasaka, T. Koi, M. Kobayashi, Y. Murase, Y. Ando, A. A. Yamaguchi : “Surface morphologies and optical proper-ties on Si doped InGaN MQW grown on vicinal bulk GaN (0001) substrates”  Jpn. J. Appl. Phys., vol.52, pp. 115601-1- 115601-6 (2013) 
    6. A. Okada, S. Shoji, H. Shinohara, H. Nishihara, H. Goto, H. Sunakawa, T. Matsueda, A. Usui, A. A. Yamaguchi, J. Mizuno : “Fabrication of Low Dislocation Density GaN Template by Nano-channel FIELO Using Nanoimprint Lithography” , J. Photopolym. Sci. Technol., Vol.26, No.1, pp. 69-72 (2013)
    7. A Usui, T. Matsueda, H. Goto, T. Matsueda, H. Sunakawa, Y. Fujiyama, Y. Ishihara, A. Okada, S. Shoji, A. A.Yamaguchi, H. Nishihara, H. Shinohara, H. Goto, J. Mizuno : “GaN lateral overgrowth by HVPE through nanometer-size channels fabricated with nanoimprint lithography”, Jpn. J. Appl. Phys., vol.52, pp. 08JB02-1- 08JB02-4 (2013)
    8. S. Izumi, M. Minami, M. Kamada, T. Tatsumi, A. A.Yamaguchi, K. Ishikawa, M. Hori, S. Tomiya : “Photoluminescence Study of Plasma-induced Damage to GaInN SQW”,  Jpn. J. Appl. Phys., vol.52, pp. 08JL09-1-08JL09-3 (2013)

国際学会、シンポジウム講演

      1)  T. Minami, J. Nomoto, T. Miyata, T. Yamanaka : “Influence of Rapid Thermal Annealing Treatment on Various Properties of Tex-ture-Etched Al- or Ga-Doped ZnO Thin Films Deposited by Magnetron Sputtering”,  60th AVS 2014, Long beach, CA, USA (2013)
      2)  T. Minami, T. Miyata: “Oxide semiconductor heterojunction solar cells (INVITED)”, International Workshop on Luminescent Materials 2013 (Lumi Mat ’13), Kyoto, Japan, I-9 (2013)
      3)  T. Miyata, Y. Nishi, T. Minami (INVITED): “Photovoltaic Properties of Cu2O-based Heterojunction Solar Cells Fabricated with Various Semiconductors as an n-type Layer”, 2013 JSAP-MRS Joint Symposia, Kyoto, Japan, p.18a-M1-6 (2013)
      4)  T. Minami, Y. Nishi and T. Miyata: (INVITED) “Photovoltaic Properties of Al-doped ZnO/n-type semiconductor/p-type Cu2O Heterojunction Solar Cells”, ICNFA2013, Coimbatore, India (2013)
      5)  T. Minami, T. Miyata, Y. Nishi: “Fabrication of High-Efficiency Cu2O-Based Heterojunction Solar Cells Using Thermally Oxidized Copper Sheets (INVITED)”, TOEO-8, Tokyo, Japan, p.14a-I02 (2013)
      6)  Y. Nishi, T. Miyata, T. Minami: “Photovoltaic Properties of Cu2O-Based Heterojunction Solar Cells Fabricated with Multicomponent Oxides as an n-type Semiconductor Layer”, TOEO-8, Tokyo, Japan, p.14a-P09 (2013)
      7)  J. Nomoto, T. Yamanaka, T. Miyata, T. Minami : “Influence of Post-Chemical Etching on the Light Scattering Characteristics of Surface-Textured AZO Films Formed by Magnetron Sputtering Depositions”, TOEO-8, Tokyo, Japan, p.14a-P10 (2013)
      8)  T. Miyata, J. Nomoto, T. Fujita, T. Minami: “Influence of crystallographic properties on obtainable texture-etched surface structure in transparent conducting imp-purity-doped ZnO thin films”, ICMCTF2013, San Diego, CA, USA (2013)
      9)  Y. Nishi, T. Miyata, T.Minami  : “Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells”,  ICMCTF2013, San Diego, CA, USA (2013)
      10) H. Manabe, H. Goto, H. Sunakawa, T. Matsueda, A. Okada, H. Shinohara, H. Nishihara, H. Goto, J. Mizuno, A. Usui, A. A. Yamaguchi : “Direct verification of commonly-used rate-equation model in III-nitride material by detailed analysis of photoluminescence decay curves”,  SPIE Photonics West 2014, San Francisco, USA, (2014)
      11) A. Okada, H. Shinohara, H. Goto, H. Goto, A. Usui, H. Sunakawa, T. Matsueda,  A. A. Yamaguchi, S. Shoji, J. Mizuno : “High Quality GaN Template of a 2-inch Wafer Using Nanometer-Size SiO2 Lattice Mask Structure Fabricated by UV Nanoimprint Lithography”,  26th International Microprocesses and Nanotechnology Conference, Sapporo, Japan, (2013)
      12) A. Usui, H. Goto, T. Matsueda, H. Sunakawa, T. Nakagawa, A. Okada, J. Mizuno, A. A. Yamaguchi, H. Shinohara, H. Goto (invited) : “Growth of High-quality GaN Template from Nanometer-size Lattice Channels by Hydride Vapor Phase Epitaxy”, 224th Electrochemical Society Meeting, San Francisco, USA, (2013) DRAFT 4/30
      13) M. Nambu, H. Manabe, A. A. Yamaguchi, H. Goto, H. Sunakawa, T. Matsueda, A. Okada, H. Shinohara, H. Nishihara, H. Goto, J. Mizuno, A. Usui : “Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography ”, 10th International Conference on Nitride Semiconductors, Washington DC, USA, (2013)
      14) A. Okada, S. Shoji, H. Shinohara, H. Nishi-hara, H. Goto, H. Goto, H. Sunakawa, T. Matsueda, A. Usui, A. A. Yamaguchi, J. Mizuno : “Fabrication of Low Dislocation Density GaN Template by Nano-Channel FIELO using Nanoimprint Lithography”,  The 30th International Conference of Photo-polymer Science and Technology, Chiba, Japan, (2013)
      15) H. Goto, T. Matsueda, H. Sunakawa, T. Nakagawa, A. Okada, J. Mizuno, A. A. Yamaguchi, H. Shinohara, H. Goto, A. Usui : “Uniform Growth of Thin GaN Layer Through Nanometer-size Lattice Channels by Hydride Vapor Phase Epitaxy”,  6th Asia-Pacific Workshop on Wide-gap Semiconductor 2013, New Taipei, Taiwan, (2013)
      16) S. Sakai, A. A. Yamaguchi : “Theoretical Studies on Anisotropic Optical Gain Characteristics in Semipolar-Oriented InGaN Quantum-Well Laser Diodes”, 6th Asia-Pacific Workshop on Wide-gap Semiconductor 2013, New Taipei, Taiwan, (2013)
      17) A. Minamide, H. Fukada, A. A. Yamaguchi, Y. Tokunaga: “Research for engineering applications of laser-induced thermal waves and emergence stress waves”, Proc. of Symp. on Ultrasonic Electronics, Kyoto, Japan, pp. 93-94 (2013)
      18)得永嘉昭,深田晴己,山口敦史,南出章幸:“レーザ光と物質との相互作用による超音波に関する基礎研究”, 超音波研究会、金沢,pp. 1-4 (2013)


著書・解説

      1)  T. Minami: “Chapter Five - Transparent Conductive Oxides for Transparent Electrode Applications”, Semiconductors and Semimetals, Vol. 88, Elsevier, pp. 159-200 (2013).

      2) 南 内嗣 : “酸化物半導体-ITOってなに-”,  応用物理, 82(7), pp.601-604 (2013)

      3) 南 内嗣 : “酸化物半導体を用いた太陽電池の将来像とこれからの研究開発テーマの発掘”, 研究開発リーダー, 86, pp.25-28 (2013)

      4) 坂本康正 : “電子回路 ―基礎から応用までー”,共立出版,2013.9.10, ISBN978-4-320-08572-5,全253頁

      5) 山口敦史 :“<シーズ技術>レーザ光による半導体の品質評価”,北陸経済研究(2014.2) pp.32-33

      4. 受賞・新聞発表等
      1) 南 内嗣 :“第4回 北陸・信越支部貢献賞”,応用物理学会,平成26年2月1日

      2) 西 祐希: 高柳健次郎財団 研究奨励賞
      受賞テーマ:「酸化物半導体である亜酸化銅を採用する
      高効率ヘテロ接合太陽電池に関する研究」

      3)西 祐希: “第5回 薄膜太陽電池セミナー最優秀発表賞”,
      平成25年11月15日

      4) 南部 優賢:“第18回 北陸・信越支部発表奨励賞”,
      応用物理学会,平成26年2月1日(山口研所属の修士課程の学生)

      5) “亜酸化銅基板に酸化ガリウム蒸着エネ変換率5.09%に”   
      日刊工業新聞、平成24年9月13日、
      南 内嗣,宮田 俊弘,西 祐希の共同研究の成果